SKM111AR

Semikron SKM111AR

Part No:

SKM111AR

Manufacturer:

Semikron

Datasheet:

-

Package:

-

AINNX NO:

24405444-SKM111AR

Description:

Power Field-Effect Transistor, 200A I(D), 100V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, CASE D15, SEMITRANS-4

Products specifications
  • Mount
    Panel, Screw
  • Number of Pins
    4
  • Manufacturer Part Number
    SKM111AR
  • Manufacturer
    Semikron
  • Number of Elements
    1
  • RoHS
    Compliant
  • Turn Off Delay Time

    It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

    270 ns
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150 °C
  • Min Operating Temperature
    -40 °C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    700 W
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    700 W
  • Turn On Delay Time

    Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

    60 ns
  • Drain to Source Voltage (Vdss)
    100 V
  • Continuous Drain Current (ID)
    200 A
  • Threshold Voltage
    3 V
  • Gate to Source Voltage (Vgs)
    20 V
  • Input Capacitance

    The capacitance between the input terminals of an op amp with either input grounded. It is expressed in units of farads.

    10 pF
  • Drain to Source Resistance
    9 mΩ
  • Nominal Vgs
    3 V
  • Width
    42 mm
  • Height
    30 mm
  • Length
    78 mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
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