Seme LAB D2013UK

Surface Mount

having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

YES

Number of Terminals

4

Transistor Element Material

SILICON

Drain Source Voltage (Max)

65(V)

Continuous Drain Current

4(A)

Power Gain (Typ)@Vds

10(MIN)@28V(dB)

Package Type

CASE DK

Input Capacitance (Typ)@Vds

48(MAX)@0V(pF)

Operating Temp Range

-65C to 200C

Power Dissipation (Max)

83000(mW)

Output Power (Max)

20

Channel Mode

Enhancement

Drain Efficiency (Typ)

40(Min)(%)

Number of Elements

2

Frequency(Max)

2000(MHz)

Rad Hardened

No

Mounting

Screw

Package Description

FLANGE MOUNT, R-CDFM-F4

Package Style

FLANGE MOUNT

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Reflow Temperature-Max (s)

NOT SPECIFIED

Operating Temperature-Max

200 °C

Rohs Code

Yes

Manufacturer Part Number

D2013UK

Package Shape

RECTANGULAR

Manufacturer

TT Electronics Power and Hybrid / Semelab Limited

Part Life Cycle Code

Active

Ihs Manufacturer

SEMELAB LTD

Risk Rank

5.1

Drain Current-Max (ID)

4 A

Usage Level

Military grade

JESD-609 Code

e4

Pbfree Code

No

ECCN Code

EAR99

Terminal Finish

GOLD

Applications

HF/VHF/UHF

Additional Feature

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

LOW NOISE

Terminal Position

DUAL

Terminal Form

Occurring at or forming the end of a series, succession, or the like; closing; concluding.

FLAT

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

compliant

Pin Count

a count of all of the component leads (or pins)

5

JESD-30 Code

R-CDFM-F4

Qualification Status

An indicator of formal certification of qualifications.

Not Qualified

Configuration

COMMON SOURCE, 2 ELEMENTS

Operating Mode

A phase of operation during the operation and maintenance stages of the life cycle of a facility.

ENHANCEMENT MODE

Case Connection

SOURCE

Transistor Application

AMPLIFIER

Polarity/Channel Type

N-CHANNEL

Screening Level

Military

DS Breakdown Voltage-Min

65 V

Channel Type

N

FET Technology

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band

ULTRA HIGH FREQUENCY BAND

Frequency (Min)

1(MHz)