FMG50AQ120N6

Sanrex FMG50AQ120N6

Part No:

FMG50AQ120N6

Manufacturer:

Sanrex

Datasheet:

-

Package:

TO-247-4

AINNX NO:

55871348-FMG50AQ120N6

Description:

SIC MOSFET TO-247 SINGLE 1200V

Products specifications
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-4
  • Supplier Device Package
    TO-247-4L
  • Package
    Tube
  • Current - Continuous Drain (Id) @ 25℃
    50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    20V
  • Mfr
    SanRex Corporation
  • Power Dissipation (Max)
    440W (Tc)
  • Product Status
    Active
  • Vds - Drain-Source Breakdown Voltage
    1.2 kV
  • Typical Turn-On Delay Time
    54 ns
  • Vgs th - Gate-Source Threshold Voltage
    5 V
  • Pd - Power Dissipation
    440 W
  • Transistor Polarity
    N-Channel
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 150 C
  • Vgs - Gate-Source Voltage
    - 7 V, + 22 V
  • Minimum Operating Temperature
    - 40 C
  • Factory Pack QuantityFactory Pack Quantity
    30
  • Mounting Styles
    SMD/SMT
  • Channel Mode
    Enhancement
  • Manufacturer
    SanRex
  • Brand
    SanRex
  • Qg - Gate Charge
    290 nC
  • Rds On - Drain-Source Resistance
    30 mOhms
  • RoHS
    Details
  • Typical Turn-Off Delay Time
    92 ns
  • Id - Continuous Drain Current
    50 A
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -40°C ~ 150°C (TJ)
  • Series
    -
  • Subcategory
    MOSFETs
  • Technology
    SiC (Silicon Carbide Junction Transistor)
  • Number of Channels
    1 Channel
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    28mOhm @ 50A, 20V
  • Vgs(th) (Max) @ Id
    5V @ 1.5mA
  • Input Capacitance (Ciss) (Max) @ Vds
    9000 pF @ 20 V
  • Gate Charge (Qg) (Max) @ Vgs
    290 nC @ 20 V
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    48 ns
  • Drain to Source Voltage (Vdss)
    1200 V
  • Vgs (Max)
    +22V, -7V
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    MOSFET
  • FET Feature
    -
  • Product Category

    a particular group of related products.

    MOSFET
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