SI-B9V142570EU
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69141911-SI-B9V142570EU
SSH25N40
Samsung SemiconductorPower Field-Effect Transistor, 25A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PINSSP4N80
Samsung SemiconductorDescription: Power Field-Effect Transistor, 4A I(D), 800V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PINSFS9530
Samsung SemiconductorPower Field-Effect Transistor, 8A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PINSSP10N60A
Samsung SemiconductorDescription: Power Field-Effect Transistor, 9A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PINSSH6N55
Samsung SemiconductorPower Field-Effect Transistor, 6A I(D), 550V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PINIRFS9Z34
Samsung SemiconductorPower Field-Effect Transistor, 12A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PINSSS7N60
Samsung SemiconductorPower Field-Effect Transistor, 4A I(D), 600V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PINSSD2009
Samsung SemiconductorPower Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8SSR4N60A
Samsung SemiconductorPower Field-Effect Transistor, 2.8A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3IRFZ12
Samsung SemiconductorDescription: Power Field-Effect Transistor, 8.3A I(D), 50V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN