QH8MA4TCR

ROHM Semiconductor QH8MA4TCR

Part No:

QH8MA4TCR

Manufacturer:

ROHM Semiconductor

Package:

8-SMD, Flat Lead

ROHS:

AINNX NO:

6377943-QH8MA4TCR

Description:

MOSFET N/P-CH 30V TSMT8

Products specifications
  • Factory Lead Time
    20 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SMD, Flat Lead
  • Number of Pins
    2
  • Transistor Element Material
    SILICON
  • Current - Continuous Drain (Id) @ 25℃
    9A 8A
  • Number of Elements
    2
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    150°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Cut Tape (CT)
  • Published
    2015
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    1.5W
  • Terminal Position
    DUAL
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PDSO-F8
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • FET Type
    N and P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    16m Ω @ 9A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    640pF @ 15V
  • Gate Charge (Qg) (Max) @ Vgs
    15.5nC @ 10V
  • Drain to Source Voltage (Vdss)
    30V
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Continuous Drain Current (ID)
    8A
  • Drain-source On Resistance-Max
    0.016Ohm
  • DS Breakdown Voltage-Min
    30V
  • Avalanche Energy Rating (Eas)
    3.5 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Standard
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
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