2SD1862TV2P

ROHM Semiconductor 2SD1862TV2P

Part No:

2SD1862TV2P

Manufacturer:

ROHM Semiconductor

Datasheet:

-

Package:

3-SIP

AINNX NO:

32858304-2SD1862TV2P

Description:

Bipolar Transistors - BJT Trans GP BJT NPN 32V 2A 3-Pin ATV T/R

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    NO
  • Mounting Type
    Through Hole
  • Package / Case
    3-SIP
  • Supplier Device Package
    ATV
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • Manufacturer Part Number
    2SD1862TV2P
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    ROHM CO LTD
  • Package Description
    IN-LINE, R-PSIP-T3
  • Risk Rank
    5.82
  • Number of Elements
    1
  • Operating Temperature-Max
    150 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    IN-LINE
  • Reflow Temperature-Max (s)
    10
  • Transition Frequency-Nom (fT)
    100 MHz
  • Package
    Tape & Reel (TR)
  • Current-Collector (Ic) (Max)
    2 A
  • Base Product Number
    2SD1862
  • Mfr
    Rohm Semiconductor
  • Product Status
    Active
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    150°C (TJ)
  • Series
    -
  • JESD-609 Code
    e1
  • Terminal Finish
    TIN SILVER COPPER
  • Terminal Position
    SINGLE
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    THROUGH-HOLE
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    compliant
  • JESD-30 Code
    R-PSIP-T3
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE
  • Power - Max
    1 W
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    NPN
  • Transistor Type
    PNP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    120 @ 2mA, 1V
  • Current - Collector Cutoff (Max)
    1µA (ICBO)
  • Vce Saturation (Max) @ Ib, Ic
    400mV @ 5mA, 50mA
  • Voltage - Collector Emitter Breakdown (Max)
    32 V
  • Collector Current-Max (IC)
    2 A
  • DC Current Gain-Min (hFE)
    82
  • Collector-Emitter Voltage-Max
    32 V
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