UPA2792GR-E1-AZ

Renesas Electronics Corporation UPA2792GR-E1-AZ

Part No:

UPA2792GR-E1-AZ

Datasheet:

Package:

-

AINNX NO:

69180470-UPA2792GR-E1-AZ

Description:

Nch/Pch Dual Power Mosfet 30V 10A 12.5Mohm Power Sop8

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    8
  • Transistor Element Material
    SILICON
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    RENESAS ELECTRONICS CORP
  • Part Package Code
    SOP
  • Package Description
    SMALL OUTLINE, R-PDSO-G8
  • Manufacturer Package Code
    PRSP0008DN-A8
  • Drain Current-Max (ID)
    10 A
  • Number of Elements
    2
  • Operating Temperature-Max
    150 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE
  • JESD-609 Code
    e6
  • Pbfree Code
    Yes
  • ECCN Code
    5A002
  • Terminal Finish
    TIN BISMUTH
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Reach Compliance Code
    compliant
  • Pin Count

    a count of all of the component leads (or pins)

    8
  • JESD-30 Code
    R-PDSO-G8
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Drain-source On Resistance-Max
    0.021 Ω
  • Pulsed Drain Current-Max (IDM)
    40 A
  • DS Breakdown Voltage-Min
    30 V
  • Avalanche Energy Rating (Eas)
    10 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    2 W
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