RQK0609CQDQSTL-E

Renesas Electronics Corporation RQK0609CQDQSTL-E

Part No:

RQK0609CQDQSTL-E

Package:

-

AINNX NO:

68723309-RQK0609CQDQSTL-E

Description:

4A, 60V, 0.125ohm, N-CHANNEL, Si, POWER, MOSFET, SC-62, UPAK-4

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • Exterior Housing Material
    1
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    RENESAS ELECTRONICS CORP
  • Part Package Code
    SC-62
  • Package Description
    SMALL OUTLINE, R-PSSO-F3
  • Drain Current-Max (ID)
    4 A
  • Operating Temperature-Max
    150 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE
  • JESD-609 Code
    e6
  • Pbfree Code
    Yes
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN BISMUTH
  • Terminal Position
    SINGLE
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    FLAT
  • Reach Compliance Code
    compliant
  • Pin Count

    a count of all of the component leads (or pins)

    4
  • JESD-30 Code
    R-PSSO-F3
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • Drain-source On Resistance-Max
    0.125 Ω
  • Pulsed Drain Current-Max (IDM)
    12 A
  • DS Breakdown Voltage-Min
    60 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    1.5 W
  • Saturation Current
    1
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