NE3210S01-T1B

Renesas Electronics Corporation NE3210S01-T1B

Part No:

NE3210S01-T1B

Package:

-

AINNX NO:

68717959-NE3210S01-T1B

Description:

Description: NE3210S01-T1B

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    4
  • Transistor Element Material
    SILICON
  • Exterior Housing Material
    1
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    RENESAS ELECTRONICS CORP
  • Package Description
    MICROWAVE, X-PXMW-G4
  • Drain Current-Max (ID)
    0.015 A
  • Operating Temperature-Max
    125 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    UNSPECIFIED
  • Package Style
    MICROWAVE
  • Relative humidity
    35...85 %
  • Operating ambient temperature
    -40...+80 °C
  • JESD-609 Code
    e0
  • Pbfree Code
    Yes
  • ECCN Code
    EAR99
  • Type
    Single-phase linear solid state relay from the SCR series with fuse
  • Terminal Finish
    TIN LEAD
  • HTS Code

    HTS (Harmonized Tariff Schedule) codes are product classification codes between 8-1 digits. The first six digits are an HS code, and the countries of import assign the subsequent digits to provide additional classification. U.S. HTS codes are 1 digits and are administered by the U.S. International Trade Commission.

    8541.21.00.95
  • Terminal Position
    UNSPECIFIED
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Peak Reflow Temperature (Cel)
    230
  • Depth
    62 mm
  • Reach Compliance Code
    compliant
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    X-PXMW-G4
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    DEPLETION MODE
  • Case Connection
    SOURCE
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    N-CHANNEL
  • DS Breakdown Voltage-Min
    3 V
  • FET Technology
    HETERO-JUNCTION
  • Fuse
    10x38 mm 10 A
  • Highest Frequency Band
    KU BAND
  • Power Dissipation Ambient-Max
    0.165 W
  • Power Gain-Min (Gp)
    12 dB
  • Height
    35 mm
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