2SK3391JX

Renesas Electronics America Inc 2SK3391JX

Part No:

2SK3391JX

Datasheet:

-

Package:

TO-243AA

AINNX NO:

28201802-2SK3391JX

Description:

RF N-CHANNEL MOSFET

Products specifications
  • Factory Lead Time
    1 Week
  • Package / Case
    TO-243AA
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Supplier Device Package
    UPAK
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • Mfr
    Renesas Electronics America Inc
  • Package
    Bulk
  • Product Status
    Active
  • Voltage Rated

    RATED voltage is the voltage on the nameplate - the "design point" for maximum power throughput and safe thermal operation.

    17 V
  • Package Description
    UAPK-3
  • Package Style
    SMALL OUTLINE
  • Package Body Material
    PLASTIC/EPOXY
  • Operating Temperature-Max
    150 °C
  • Manufacturer Part Number
    2SK3391JX
  • Package Shape
    RECTANGULAR
  • Manufacturer
    Renesas Electronics Corporation
  • Number of Elements
    1
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    RENESAS ELECTRONICS CORP
  • Risk Rank
    5.2
  • Drain Current-Max (ID)
    0.3 A
  • Series
    -
  • ECCN Code
    EAR99
  • Subcategory
    FET General Purpose Power
  • Current Rating (Amps)
    10μA
  • Terminal Position
    SINGLE
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    FLAT
  • Reach Compliance Code
    compliant
  • Frequency
    100MHz ~ 2.5GHz
  • Pin Count

    a count of all of the component leads (or pins)

    3
  • JESD-30 Code
    R-PSSO-F3
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    SOURCE
  • Current - Test
    150 mA
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    N-CHANNEL
  • Transistor Type
    N-Channel
  • Gain
    -
  • Drain Current-Max (Abs) (ID)
    0.3 A
  • DS Breakdown Voltage-Min
    17 V
  • Power - Output
    1.6W
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    5 W
  • Noise Figure

    Noise figure (NF) and noise factor (F) are measures of degradation of the signal-to-noise ratio (SNR), caused by components in a signal chain.

    -
  • Voltage - Test
    13.7 V
  • Highest Frequency Band
    ULTRA HIGH FREQUENCY BAND
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