Renesas Electronics America UPA672T-T1-A

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Number of Pins

6

Number of Elements

2

Turn Off Delay Time

It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

20 ns

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Cut Tape (CT)

Published

1998

Pbfree Code

yes

Part Status

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

150°C

Min Operating Temperature

-55°C

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

200mW

Pin Count

a count of all of the component leads (or pins)

6

Power Dissipation

the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

200mW

Turn On Delay Time

Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

9 ns

FET Type

2 N-Channel (Dual)

Rds On (Max) @ Id, Vgs

20 Ω @ 10mA, 4V

Input Capacitance (Ciss) (Max) @ Vds

6pF @ 3V

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

50ns

Drain to Source Voltage (Vdss)

50V

Fall Time (Typ)

40 ns

Continuous Drain Current (ID)

100mA

Gate to Source Voltage (Vgs)

7V

Drain to Source Breakdown Voltage

50V

FET Feature

Logic Level Gate

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No

RoHS Status

RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

ROHS3 Compliant

Lead Free

Lead Free