NV4V41SF-A
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47491586-NV4V41SF-A
High optical output power: Po = 600 mW @CW Peak wavelength: λp = 400 to 405 nm Multi transverse mode (lateral) Operating temperature range: TC = 0 to +30°C φ 5.6 mm CAN package
NX7535BN-AA-AZ
RenesasHigh output power: Pf = 30 mW @ IFP = 200 mA*1 Long wavelength: λC = 1 550 nm Built-in monitor PD*1 Pulse Conditions: Pulse width (PW) = 10 μs, Duty = 1%NDL7601P
Renesas Electronics CorporationLASER DIODE W/MONITOR,1.31UM PEAK WAVELENGTH,CANCNX7639BB-AA-AZ
RenesasHigh output power: Pf = 70 mW @ IFP = 1 000 mA*1 Long wavelength: λC = 1 625 nm *1 Pulse Conditions: Pulse width (PW) = 10 μs, Duty = 1%NV4V31SF-A
RenesasNV4V31SF - BLUE-VIOLET LASER DIODE 405 NM BLUE-VIOLET LASER LIGHT SOURCENX7363JB-BC-AZ
RenesasHigh output power: Pf = 150 mW MIN. @ IFP = 1 000 mA, PW = 10 μs, Duty = 1% Long wavelength: λC = 1 310 nm Internal thermoelectric cooler, thermistor Hermetically sealed 14-pin Dual-In-Line Package Single mode fiber pigtailNX7637BF-AA-AZ
RenesasHigh output power: Pf = 140 mW @ IFP = 1 000 mA*1 Long wavelength: λC = 1 625 nm *1 Pulse Conditions: Pulse width (PW) = 10 μs, Duty = 1%NX8663JB-BC-AZ
RenesasDistributed Feed-Back (DFB) pulsed laser diode High output power: Pf = 80 mW TYP. @ IFP = 450 mA, PW = 10 μs, Duty = 1% Wavelength: λp = 1 650 nm TYPNX7335AN-AA-AZ
RenesasHigh output power: Pf = 40 mW @ IFP = 200 mA*1 Long wavelength: λC = 1 310 nm Built-in monitor PD *1 Pulse Conditions: Pulse width (PW) = 10 μs, Duty = 1%NX7538BF-AA-AZ
RenesasHigh output power: Pf = 80 mW @ IFP = 400 mA*1 Long wavelength: λC = 1 550 nm *1 Pulse Conditions: Pulse width (PW) = 10 μs, Duty = 1%HL6348MG
Renesas Electronics Corporation635nm, LASER DIODE, LD/MG, 3 PIN