Qorvo UJ4SC075008L8S

Package / Case

MO-229-8

Vds - Drain-Source Breakdown Voltage

750 V

Vgs th - Gate-Source Threshold Voltage

5.5 V

Pd - Power Dissipation

600 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

75 nC

Rds On - Drain-Source Resistance

8 mOhms

Id - Continuous Drain Current

106 A

Technology

SiC

Number of Channels

1 Channel