UJ3C120080K3S

Qorvo UJ3C120080K3S

Part No:

UJ3C120080K3S

Manufacturer:

Qorvo

Package:

-

AINNX NO:

68720928-UJ3C120080K3S

Description:

Description: Power Field-Effect Transistor, 33A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Junction Cascode FET, TO-247,

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    NO
  • Material
    housing - PA66, UL94V-2/UL94V-0
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON CARBIDE
  • Exterior Housing Material
    1
  • Name
    Clamp-terminal 2x2 pass-through branch on 2 poles
  • Nominal voltage
    (AC) 250 V
  • Maximum current
    24 A
  • Wire cross-section
    0.08...2.5 (4.0 for multi-strand wire) mm2
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    QORVO INC
  • Drain Current-Max (ID)
    33 A
  • Operating Temperature-Max
    175 °C
  • Operating Temperature-Min
    -55 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    FLANGE MOUNT
  • ECCN Code
    EAR99
  • Color
    markings: red/blue
  • Terminal Position
    SINGLE
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    THROUGH-HOLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PSFM-T3
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    DEPLETION MODE
  • Case Connection
    DRAIN
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • JEDEC-95 Code
    TO-247
  • Drain-source On Resistance-Max
    0.1 Ω
  • Pulsed Drain Current-Max (IDM)
    77 A
  • DS Breakdown Voltage-Min
    1200 V
  • Avalanche Energy Rating (Eas)
    58.5 mJ
  • FET Technology
    JUNCTION CASCODE
  • Power Dissipation-Max (Abs)
    254.2 W
  • Feedback Cap-Max (Crss)
    2.1 pF
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