UG4SC075009K4S

Qorvo UG4SC075009K4S

Part No:

UG4SC075009K4S

Manufacturer:

Qorvo

Package:

TO-247-4

AINNX NO:

69622577-UG4SC075009K4S

Description:

Discrete Semiconductor Modules 1200V-8.8mOhm Dual-Gate SiC FET

Products specifications
  • Package / Case
    TO-247-4
  • RoHS
    RoHS Compliant
  • Vgs - Gate-Source Voltage
    - 20 V, + 25 V
  • Mounting Styles
    SMD/SMT
  • Minimum Operating Temperature
    - 55 C
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 175 C
  • Id - Continuous Drain Current
    106 A
  • Rds On - Drain-Source Resistance
    8.8 mOhms
  • Typical Turn-Off Delay Time
    114 ns
  • Typical Turn-On Delay Time
    24 ns
  • Vds - Drain-Source Breakdown Voltage
    750 V
  • Vgs th - Gate-Source Threshold Voltage
    4.5 V
  • Series
    UG4S
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    25 ns
  • Product
    Combo FET
  • Vf - Forward Voltage
    1.24 V
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