UG4SC075009K4S
TO-247-4
69622577-UG4SC075009K4S
Discrete Semiconductor Modules 1200V-8.8mOhm Dual-Gate SiC FET
the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.
In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.