PROTEK DEVICES PLCDA12C-6-LF

Mount

Surface Mount

Number of Pins

8

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.10.00.80

Automotive

Unknown

Direction Type

Bi-Directional

Number of Elements per Chip

6

Maximum Working Voltage (V)

12

Minimum Breakdown Voltage (V)

13.3

Maximum Clamping Voltage (V)

33

Maximum Peak Pulse Current (A)

21

Maximum Leakage Current (uA)

2

Test Current (mA)

1

Peak Pulse Power Dissipation (W)

500

Capacitance Value (pF)

8

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

Surface Mount

Package Height

1.5(Max)

Package Width

4(Max)

Package Length

5(Max)

PCB changed

8

Standard Package Name

SOP

Supplier Package

SO

Lead Shape

Gull-wing

Schedule B

8536300000, 8536300000/8536300000/8536300000/8536300000/8536300000

Reverse Stand-off Voltage

12 V

Number of Elements

6

RoHS

Compliant

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tube

Part Status

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Active

Type

TVS

Max Operating Temperature

The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

150 °C

Min Operating Temperature

-55 °C

Capacitance

8 pF

Depth

4 mm

Pin Count

a count of all of the component leads (or pins)

8

Working Voltage

12 V

Polarity

Bidirectional

Configuration

Hex

Leakage Current

2 µA

Clamping Voltage

19 V

Peak Pulse Current

The peak pulse power rating of a TVS diode is defined as the instantaneous power dissipated by a device for a given pulse condition, and is a measure of the power that is dissipated in the TVS junction during a given transient event.

21 A

Peak Pulse Power

500 W

Direction

Bidirectional

Test Current

1 mA

Reverse Breakdown Voltage

13.3 V

Length

5 mm

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No