QJD1210011

Powerex Inc. QJD1210011

Part No:

QJD1210011

Manufacturer:

Powerex Inc.

Package:

Module

ROHS:

AINNX NO:

6826773-QJD1210011

Description:

MOSFET 2N-CH 1200V 100A SIC

Products specifications
  • Mount
    Chassis Mount
  • Mounting Type
    Chassis Mount
  • Package / Case
    Module
  • Current - Continuous Drain (Id) @ 25℃
    100A Tc
  • Number of Elements
    2
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -40°C~175°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Bulk
  • Published
    2014
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    20
  • ECCN Code
    EAR99
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    900W
  • Terminal Position
    UPPER
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    UNSPECIFIED
  • Reach Compliance Code
    unknown
  • JESD-30 Code
    R-PUFM-X20
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    ISOLATED
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    25m Ω @ 100A, 20V
  • Vgs(th) (Max) @ Id
    5V @ 10mA
  • Input Capacitance (Ciss) (Max) @ Vds
    10200pF @ 800V
  • Gate Charge (Qg) (Max) @ Vgs
    500nC @ 20V
  • Drain to Source Voltage (Vdss)
    1200V 1.2kV
  • Continuous Drain Current (ID)
    100A
  • Drain-source On Resistance-Max
    0.025Ohm
  • Pulsed Drain Current-Max (IDM)
    250A
  • DS Breakdown Voltage-Min
    1200V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Silicon Carbide (SiC)
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    RoHS Compliant
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