BAW56W

Philips Semiconductors BAW56W

Part No:

BAW56W

Package:

-

AINNX NO:

68715481-BAW56W

Description:

Rectifier Diode

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Mounting Hole Diameter
    12.2 mm
  • Gross Weight
    25.00
  • Transport Package size/quantity
    44*26*31/1000
  • Switching Scheme
    ON-OFF-ON SPDT C/O
  • Teral Type
    Screw Terminalmin
  • Number of switching cycles (electrical)
    ≥10000
  • Dielectric Strength
    1500 (50 Hz, 1 min.) V
  • Number of contacts in group/ groups (total contacts)
    3/ 1 (3S)
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Transferred
  • Ihs Manufacturer
    PHILIPS SEMICONDUCTORS
  • Forward Voltage-Max (VF)
    1.2 V
  • Operating Temperature-Max
    150 °C
  • JESD-609 Code
    e3
  • ECCN Code
    EAR99
  • Terminal Finish
    MATTE TIN
  • Peak Reflow Temperature (Cel)
    260
  • Depth
    53 mm
  • Reach Compliance Code
    unknown
  • Contact Resistance
    50 mOhm at most
  • Insulation Resistance

    The measurement of insulation resistance is carried out by means of a megohmmeter – high resistance range ohmmeter. A general rule-of-thumb is 10 Megohm or more.

    ≥1000 (at Uins.dc=500 V) MOhm
  • Diode Type
    RECTIFIER DIODE
  • Output Current-Max
    0.13 A
  • Operating Temperature Range

    An operating temperature is the allowable temperature range of the local ambient environment at which an electrical or mechanical device operates. The device will operate effectively within a specified temperature range which varies based on the device function and application context, and ranges from the minimum operating temperature to the maximum operating temperature (or peak operating temperature).

    -25…+70 °C
  • Rated Current
    3 (5), Imax=6 A
  • Rep Pk Reverse Voltage-Max
    85 V
  • Non-rep Pk Forward Current-Max
    4 A
  • Rated Voltage
    250 (125) V
  • Reverse Recovery Time-Max
    0.004 μs
  • Height
    29 mm
  • Width
    15.8 mm
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