PJMP120N60EC_T0_00001

Panjit PJMP120N60EC_T0_00001

Part No:

PJMP120N60EC_T0_00001

Manufacturer:

Panjit

Datasheet:

-

Package:

TO-220-3

AINNX NO:

55350058-PJMP120N60EC_T0_00001

Description:

MOSFET 600V/ 360mohm Super Junction Easy version Gen.1.5

Products specifications
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Supplier Device Package
    TO-220AB-L
  • Vds - Drain-Source Breakdown Voltage
    600 V
  • Vgs th - Gate-Source Threshold Voltage
    4 V
  • Pd - Power Dissipation
    235 W
  • Transistor Polarity
    N-Channel
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 150 C
  • Vgs - Gate-Source Voltage
    - 30 V, + 30 V
  • Unit Weight
    0.073899 oz
  • Minimum Operating Temperature
    - 55 C
  • Factory Pack QuantityFactory Pack Quantity
    2000
  • Mounting Styles
    Through Hole
  • Channel Mode
    Enhancement
  • Manufacturer
    Panjit
  • Brand
    Panjit
  • Qg - Gate Charge
    51 nC
  • Rds On - Drain-Source Resistance
    120 mOhms
  • RoHS
    Details
  • Id - Continuous Drain Current
    30 A
  • Package
    Tube
  • Current - Continuous Drain (Id) @ 25℃
    30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Mfr
    Panjit International Inc.
  • Power Dissipation (Max)
    235W (Tc)
  • Product Status
    Active
  • Series
    600V SJ MOSFET
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    MouseReel
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C ~ 150°C (TJ)
  • Subcategory
    MOSFETs
  • Technology
    Si
  • Number of Channels
    1 Channel
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    120mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Input Capacitance (Ciss) (Max) @ Vds
    1960 pF @ 400 V
  • Gate Charge (Qg) (Max) @ Vgs
    51 nC @ 10 V
  • Drain to Source Voltage (Vdss)
    600 V
  • Vgs (Max)
    ±30V
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    MOSFET
  • FET Feature
    -
  • Product
    MOSFET
  • Product Category

    a particular group of related products.

    MOSFET
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