Panjit PJMB210N65EC_R2_00601

Package / Case

TO-263

Mounting Type

Surface Mount

Supplier Device Package

TO-263

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

30 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

150 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.000510 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

800

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Panjit

Brand

Panjit

Qg - Gate Charge

34 nC

Rds On - Drain-Source Resistance

210 mOhms

RoHS

Details

Typical Turn-Off Delay Time

111 ns

Id - Continuous Drain Current

19 A

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

19A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Mfr

Panjit International Inc.

Power Dissipation (Max)

150W (Tc)

Product Status

Active

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

MouseReel

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C ~ 150°C (TJ)

Series

-

Subcategory

MOSFETs

Technology

Si

Number of Channels

1 Channel

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

210mOhm @ 9.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds

1412 pF @ 400 V

Gate Charge (Qg) (Max) @ Vgs

34 nC @ 10 V

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

65 ns

Drain to Source Voltage (Vdss)

650 V

Vgs (Max)

±30V

Product Type

a group of products which fulfill a similar need for a market segment or market as a whole.

MOSFET

Transistor Type

1 N-Channel

FET Feature

-

Product Category

a particular group of related products.

MOSFET