NUP8011MUTAG

ON Semiconductor NUP8011MUTAG

Part No:

NUP8011MUTAG

Manufacturer:

ON Semiconductor

Datasheet:

NUP8011MU

Package:

8-UFDFN Exposed Pad

ROHS:

AINNX NO:

2865743-NUP8011MUTAG

Description:

IC TVS ARRAY LO CAP ESD 8-UDFN

Products specifications
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    2 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    8-UFDFN Exposed Pad
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Diode Element Material
    SILICON
  • Breakdown Voltage / V
    6.47V
  • Number of Elements
    8
  • Reverse Stand-off Voltage
    4.3V
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Published
    2007
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    85°C
  • Min Operating Temperature
    -40°C
  • Applications
    General Purpose
  • Capacitance
    12pF
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    380mW
  • Terminal Position
    DUAL
  • Pin Count

    a count of all of the component leads (or pins)

    8
  • Operating Supply Voltage

    The voltage level by which an electrical system is designated and to which certain operating characteristics of the system are related.

    4.3V
  • Working Voltage
    4.3V
  • Leakage Current
    1μA
  • Number of Circuits
    1
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Common Anode
  • Diode Type
    TRANS VOLTAGE SUPPRESSOR DIODE
  • Max Reverse Leakage Current
    1μA
  • Peak Pulse Power
    380mW
  • Direction
    Unidirectional
  • Halogen Free
    Halogen Free
  • Test Current
    1mA
  • Reverse Breakdown Voltage
    6.47V
  • ESD Protection
    Yes
  • Min Breakdown Voltage
    6.47V
  • Height
    500μm
  • Length
    1.8mm
  • Width
    1.2mm
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
  • Lead Free
    Lead Free
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