ON Semiconductor KSP10BU

Lifecycle Status

ACTIVE (Last Updated: 11 hours ago)

Factory Lead Time

6 Weeks

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Number of Pins

3

Weight

179mg

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

25V

Number of Elements

1

hFEMin

60

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

150°C TJ

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Bulk

Published

2002

Pbfree Code

yes

Part Status

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Voltage - Rated DC

25V

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

350mW

Terminal Position

BOTTOM

Current Rating

Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.

100mA

Frequency

650MHz

Base Part Number

KSP10

Element Configuration

The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

Single

Power Dissipation

the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

350mW

Gain Bandwidth Product

The gain–bandwidth product (designated as GBWP, GBW, GBP, or GB) for an amplifier is the product of the amplifier's bandwidth and the gain at which the bandwidth is measured.

650MHz

Polarity/Channel Type

NPN

Transistor Type

NPN

Collector Emitter Voltage (VCEO)

25V

Max Collector Current

50mA

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 4mA 10V

Transition Frequency

650MHz

Collector Base Voltage (VCBO)

30V

Emitter Base Voltage (VEBO)

3V

Collector-Base Capacitance-Max

0.7pF

Height

4.58mm

Length

4.58mm

Width

3.86mm

REACH SVHC

No SVHC

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No

RoHS Status

RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

ROHS3 Compliant

Lead Free

Lead Free