KDT00030TR

ON Semiconductor KDT00030TR

Part No:

KDT00030TR

Manufacturer:

ON Semiconductor

Datasheet:

KDT00030_A

Package:

2-SMD, J-Lead

ROHS:

AINNX NO:

4954509-KDT00030TR

Description:

Phototransistor Chip 630nm 2-Pin SMD T/R

Products specifications
  • Lifecycle Status
    ACTIVE (Last Updated: 15 hours ago)
  • Factory Lead Time
    12 Weeks
  • Contact Plating

    Contact plating (finish) provides corrosion protection for base metals and optimizes the mechanical and electrical properties of the contact interfaces.

    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    2-SMD, J-Lead
  • Number of Pins
    2
  • Weight
    128.7mg
  • Collector-Emitter Breakdown Voltage
    6V
  • Collector-Emitter Saturation Voltage
    4.6V
  • Number of Elements
    1
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -40°C~85°C TA
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Published
    2013
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    4 (72 Hours)
  • ECCN Code
    EAR99
  • Orientation
    Top View
  • Polarity
    NPN
  • Optoelectronic Device Type
    PHOTO TRANSISTOR
  • Lens Style
    Flat
  • Collector Emitter Voltage (VCEO)
    60V
  • Max Collector Current
    1.1mA
  • Max Breakdown Voltage
    60V
  • Dark Current

    the relatively small electric current that flows through photosensitive devices such as a photomultiplier tube, photodiode, or charge-coupled device even when no photons are entering the device.

    100nA
  • Height
    600μm
  • Length
    1.7mm
  • Width
    800μm
  • REACH SVHC
    No SVHC
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
  • Lead Free
    Lead Free
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