ON Semiconductor HGT1S7N60B3DS9A

Surface Mount

having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

YES

Number of Terminals

2

Transistor Element Material

SILICON

Voltage, Rating

150 V

Package Description

SMALL OUTLINE, R-PSSO-G2

Package Style

SMALL OUTLINE

Package Body Material

PLASTIC/EPOXY

Turn-on Time-Nom (ton)

46 ns

Operating Temperature-Min

-55 °C

Turn-off Time-Nom (toff)

350 ns

Operating Temperature-Max

150 °C

Manufacturer Part Number

HGT1S7N60B3DS9A

Package Shape

RECTANGULAR

Manufacturer

ON Semiconductor

Number of Elements

1

Part Life Cycle Code

Active

Ihs Manufacturer

ON SEMICONDUCTOR

Turn-off Time-Max (toff)

470 ns

Risk Rank

5.62

Tolerance

0.5 %

Temperature Coefficient

The resistance-change factor per degree Celsius of temperature change is called the temperature coefficient of resistance. This factor is represented by the Greek lower-case letter “alpha” (α). A positive coefficient for a material means that its resistance increases with an increase in temperature.

100 ppm/°C

Resistance

352 kΩ

Max Operating Temperature

The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

155 °C

Min Operating Temperature

-55 °C

Composition

Thin Film

Power Rating

250 mW

Terminal Position

SINGLE

Terminal Form

Occurring at or forming the end of a series, succession, or the like; closing; concluding.

GULL WING

Reach Compliance Code

compliant

JESD-30 Code

R-PSSO-G2

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

COLLECTOR

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

JEDEC-95 Code

TO-263AB

Power Dissipation-Max (Abs)

60 W

Collector Current-Max (IC)

14 A

Collector-Emitter Voltage-Max

600 V

Gate-Emitter Voltage-Max

20 V

VCEsat-Max

2.1 V

Gate-Emitter Thr Voltage-Max

6 V

Fall Time-Max (tf)

175 ns

Height

650 µm