ON Semiconductor FGA25N120ANTDTU

Factory Lead Time

6 Weeks

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Number of Pins

3

Weight

6.40101g

Collector-Emitter Breakdown Voltage

1.2kV

Test Conditions

600V, 25A, 10 Ω, 15V

Turn Off Delay Time

It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

190 ns

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C~150°C TJ

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tube

Published

2004

JESD-609 Code

e3

Part Status

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

HTS Code

HTS (Harmonized Tariff Schedule) codes are product classification codes between 8-1 digits. The first six digits are an HS code, and the countries of import assign the subsequent digits to provide additional classification. U.S. HTS codes are 1 digits and are administered by the U.S. International Trade Commission.

8541.29.00.95

Voltage - Rated DC

1.2kV

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

312W

Current Rating

Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.

50A

Base Part Number

FGA25N120A

Element Configuration

The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

Single

Power Dissipation

the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

312mW

Input Type

Standard

Turn On Delay Time

Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

50 ns

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

60ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

50A

Reverse Recovery Time

350 ns

Voltage - Collector Emitter Breakdown (Max)

1200V

Vce(on) (Max) @ Vge, Ic

2.65V @ 15V, 50A

Max Junction Temperature (Tj)

150°C

Continuous Collector Current

50A

IGBT Type

NPT and Trench

Gate Charge

the amount of charge that needs to be injected into the gate electrode to turn ON (drive) the MOSFET.

200nC

Current - Collector Pulsed (Icm)

90A

Td (on/off) @ 25°C

50ns/190ns

Switching Energy

4.1mJ (on), 960μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

7.5V

Height

23.8mm

Length

15.8mm

Width

5mm

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No

RoHS Status

RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

ROHS3 Compliant

Lead Free

Lead Free