NXP Semiconductors PTVS30VP1UTP

Number of Pins

2

Breakdown Voltage / V

33.3 V

Reverse Stand-off Voltage

30 V

RoHS

Compliant

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

600 W

Polarity

Unidirectional

Clamping Voltage

48.4 V

Peak Pulse Current

The peak pulse power rating of a TVS diode is defined as the instantaneous power dissipated by a device for a given pulse condition, and is a measure of the power that is dissipated in the TVS junction during a given transient event.

12.4 A

Peak Pulse Power

600 W

Max Breakdown Voltage

36.8 V

Min Breakdown Voltage

33.3 V

REACH SVHC

No SVHC