Surface Mount
having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.
YES
Material
galvanized steel (yellow)
Number of Terminals
3
Transistor Element Material
SILICON
Exterior Housing Material
1
Drain Current-Max (ID)
3.9 A
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Cross type
cross type Pz
Gross weight
0.66
Transport package size/quantity
25*21*19/18000
Thread
3x16; frequent
Characteristic
sharp tip
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
NXP SEMICONDUCTORS
Part Package Code
TO-236
Package Description
PLASTIC PACKAGE-3
Manufacturer Package Code
SOT23
JESD-609 Code
e3
ECCN Code
EAR99
Type
Universal screw with countersunk head
Terminal Finish
TIN
Additional Feature
Any Feature, including a modified Existing Feature, that is not an Existing Feature.
LOW THRESHOLD
HTS Code
HTS (Harmonized Tariff Schedule) codes are product classification codes between 8-1 digits. The first six digits are an HS code, and the countries of import assign the subsequent digits to provide additional classification. U.S. HTS codes are 1 digits and are administered by the U.S. International Trade Commission.
8541.29.00.75
Terminal Position
DUAL
Terminal Form
Occurring at or forming the end of a series, succession, or the like; closing; concluding.
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
compliant
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
a count of all of the component leads (or pins)
3
JESD-30 Code
R-PDSO-G3
Qualification Status
An indicator of formal certification of qualifications.
Not Qualified
Configuration
SINGLE WITH BUILT-IN DIODE
Operating Mode
A phase of operation during the operation and maintenance stages of the life cycle of a facility.
ENHANCEMENT MODE
Transistor Application
SWITCHING
Polarity/Channel Type
P-CHANNEL
JEDEC-95 Code
TO-236AB
Drain-source On Resistance-Max
0.076 Ω
DS Breakdown Voltage-Min
20 V
FET Technology
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)
1.92 W
Saturation Current
1