BSS131

NXP Semiconductors BSS131

Part No:

BSS131

Manufacturer:

NXP Semiconductors

Package:

-

AINNX NO:

68715925-BSS131

Description:

Description: TRANSISTOR 100 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Material
    brush - copper-graphite; conductor - copper; terminal - brass
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • Exterior Housing Material
    1
  • Gross Weight
    31.00
  • Surface shape
    straight
  • Wire length
    42 mm, side connection 45 degrees
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    NXP SEMICONDUCTORS
  • Drain Current-Max (ID)
    0.1 A
  • Operating Temperature-Max
    150 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE
  • Type of bridge rectifier
    single-phase
  • Max. off-state voltage
    0.8kV
  • Max. forward impulse current
    670A
  • Electrical mounting
    screw
  • Mechanical mounting
    screw
  • Version
    module - slim
  • Leads
    M5 screws
  • Case
    PWS-D flat
  • ECCN Code
    EAR99
  • Type
    brush for commutator motor with current-carrying wire insulator
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Depth
    25.7 mm
  • Reach Compliance Code
    unknown
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • Drain-source On Resistance-Max
    16 Ω
  • DS Breakdown Voltage-Min
    240 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Height
    9.4 mm
  • Width
    31.2 mm
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