BSH205G2R

NXP Semiconductors BSH205G2R

Part No:

BSH205G2R

Manufacturer:

NXP Semiconductors

Package:

-

AINNX NO:

68717476-BSH205G2R

Description:

BSH205G2 - 20 V, P-channel Trench MOSFET TO-236 3-Pin

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • Exterior Housing Material
    1
  • Glue
    high-adhesion glue
  • Type of integrated circuit
    interface
  • Kind of integrated circuit
    digital isolator
  • Data transfer rate
    150Mbps
  • Mounting
    SMD
  • Case
    SOP8
  • Kind of channel
    unidirectional
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Transferred
  • Ihs Manufacturer
    NXP SEMICONDUCTORS
  • Part Package Code
    TO-236
  • Package Description
    ROHS COMPLIANT, PLASTIC PACKAGE-3
  • Manufacturer Package Code
    SOT23
  • Drain Current-Max (ID)
    2 A
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE
  • ECCN Code
    EAR99
  • Type
    Polyimide tape single-sided
  • Color
    yellow metallic
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count

    a count of all of the component leads (or pins)

    3
  • Reference Standard
    AEC-Q101; IEC-60134
  • JESD-30 Code
    R-PDSO-G3
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    P-CHANNEL
  • JEDEC-95 Code
    TO-236AB
  • Drain-source On Resistance-Max
    0.17 Ω
  • DS Breakdown Voltage-Min
    20 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Features
    dismantling at a temperature of 260 - 300 °C without a trace
  • Width
    50 mm
  • Thickness
    0.05 mm
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