BCP54115

NXP BCP54115

Part No:

BCP54115

Manufacturer:

NXP

Datasheet:

-

Package:

-

AINNX NO:

59649792-BCP54115

Category:

Unclassified

Description:

1 A 45 V NPN Si Power Transistor

Products specifications
  • Contact Plating

    Contact plating (finish) provides corrosion protection for base metals and optimizes the mechanical and electrical properties of the contact interfaces.

    Tin
  • Mount
    Surface Mount
  • Number of Pins
    4
  • Weight
    4.535924 g
  • Collector-Emitter Breakdown Voltage
    45 V
  • hFEMin
    63
  • Number of Elements
    1
  • RoHS
    Compliant
  • Package
    Bulk
  • Base Product Number
    BCP54
  • Mfr
    NXP USA Inc.
  • Product Status
    Active
  • Series
    *
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150 °C
  • Min Operating Temperature
    -65 °C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    960 mW
  • Frequency
    180 MHz
  • Polarity
    NPN
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    1.35 W
  • Gain Bandwidth Product

    The gain–bandwidth product (designated as GBWP, GBW, GBP, or GB) for an amplifier is the product of the amplifier's bandwidth and the gain at which the bandwidth is measured.

    180 MHz
  • Collector Emitter Voltage (VCEO)
    45 V
  • Max Collector Current
    1 A
  • Max Frequency
    180 MHz
  • Transition Frequency
    180 MHz
  • Max Breakdown Voltage
    45 V
  • Collector Base Voltage (VCBO)
    45 V
  • Emitter Base Voltage (VEBO)
    5 V
  • Width
    3.7 mm
  • Height
    1.7 mm
  • Length
    6.7 mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • Lead Free
    Lead Free
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