PBLS4003D,115

Nexperia USA Inc. PBLS4003D,115

Part No:

PBLS4003D,115

Manufacturer:

Nexperia USA Inc.

Datasheet:

PBLS4003D

Package:

SC-74, SOT-457

ROHS:

AINNX NO:

7831876-PBLS4003D,115

Description:

TRANS NPN PREBIAS/PNP 0.6W 6TSOP

Products specifications
  • Factory Lead Time
    4 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-74, SOT-457
  • Number of Pins
    6
  • Collector-Emitter Breakdown Voltage
    40V
  • Current-Collector (Ic) (Max)
    100mA 700mA
  • Number of Elements
    2
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Published
    2009
  • JESD-609 Code
    e3
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150°C
  • Min Operating Temperature
    -65°C
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    BUILT IN BIAS RESISTOR RATIO 1
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    600mW
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    PBLS4003
  • Pin Count

    a count of all of the component leads (or pins)

    6
  • Polarity
    NPN, PNP
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Dual
  • Transistor Application
    SWITCHING
  • Transistor Type
    1 NPN Pre-Biased, 1 PNP
  • Collector Emitter Voltage (VCEO)
    150mV
  • Max Collector Current
    700mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    30 @ 5mA 5V / 300 @ 100mA 5V
  • Current - Collector Cutoff (Max)
    1μA 100nA
  • Vce Saturation (Max) @ Ib, Ic
    150mV @ 500μA, 10mA / 310mV @ 100mA, 1A
  • Voltage - Collector Emitter Breakdown (Max)
    50V 40V
  • Transition Frequency
    150MHz
  • Max Breakdown Voltage
    40V
  • Frequency - Transition
    150MHz
  • Resistor - Base (R1)
    10k Ω
  • Resistor - Emitter Base (R2)
    10k Ω
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
  • Lead Free
    Lead Free
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