2N7002P

Nexperia 2N7002P

Part No:

2N7002P

Manufacturer:

Nexperia

Package:

-

AINNX NO:

68722157-2N7002P

Description:

Small Signal Field-Effect Transistor, 0.36A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • Exterior Housing Material
    1
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Not Recommended
  • Ihs Manufacturer
    NEXPERIA
  • Package Description
    SOT-23, 3 PIN
  • Drain Current-Max (ID)
    0.36 A
  • Operating Temperature-Max
    150 °C
  • Operating Temperature-Min
    -55 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE
  • Type of module
    thyristor
  • Semiconductor structure
    opposing x3
  • Max. off-state voltage
    1.2kV
  • Case
    SEMIPONT5
  • Max. forward voltage
    1.8V
  • Max. forward impulse current
    1.15kA
  • Gate current
    150mA
  • Electrical mounting
    Press-in PCB
  • Mechanical mounting
    screw
  • JESD-609 Code
    e3
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    LOGIC LEVEL COMPATIBLE
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    compliant
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PDSO-G3
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • JEDEC-95 Code
    TO-236AB
  • Drain-source On Resistance-Max
    1.6 Ω
  • DS Breakdown Voltage-Min
    60 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    1.14 W
  • Feedback Cap-Max (Crss)
    4 pF
  • Saturation Current
    1
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