NE85633-T1B-A

NEC NE85633-T1B-A

Part No:

NE85633-T1B-A

Manufacturer:

NEC

Datasheet:

-

Package:

-

AINNX NO:

50395069-NE85633-T1B-A

Description:

Trans Gp Bjt NPN 12V 0.1A 3-PIN SOT-23 T/r

Products specifications
  • Mount
    Surface Mount
  • Weight
    1.437803 g
  • Collector-Emitter Breakdown Voltage
    12 V
  • Voltage Rating (DC)
    12 V
  • RoHS
    Compliant
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Cut Tape
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150 °C
  • Min Operating Temperature
    -65 °C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    200 mW
  • Current Rating

    Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.

    100 mA
  • Frequency
    1 GHz
  • Polarity
    NPN
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Gain Bandwidth Product

    The gain–bandwidth product (designated as GBWP, GBW, GBP, or GB) for an amplifier is the product of the amplifier's bandwidth and the gain at which the bandwidth is measured.

    7 GHz
  • Collector Emitter Voltage (VCEO)
    12 V
  • Max Collector Current
    100 mA
  • Gain
    11.5 dB
  • Transition Frequency
    7 GHz
  • Max Breakdown Voltage
    12 V
  • Emitter Base Voltage (VEBO)
    3 V
  • Continuous Collector Current
    100 mA
  • Width
    1.5 mm
  • Height
    1.1 mm
  • Length
    2.9 mm
  • Lead Free
    Lead Free
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