NDS352AP

National Semiconductor Corporation NDS352AP

Part No:

NDS352AP

Package:

-

AINNX NO:

68718553-NDS352AP

Description:

Description: Small Signal Field-Effect Transistor, 0.9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • Exterior Housing Material
    1
  • Rohs Code
    No
  • Part Life Cycle Code
    Transferred
  • Ihs Manufacturer
    NATIONAL SEMICONDUCTOR CORP
  • Drain Current-Max (ID)
    0.9 A
  • Operating Temperature-Max
    150 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE
  • JESD-609 Code
    e0
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    LOGIC LEVEL COMPATIBLE
  • HTS Code

    HTS (Harmonized Tariff Schedule) codes are product classification codes between 8-1 digits. The first six digits are an HS code, and the countries of import assign the subsequent digits to provide additional classification. U.S. HTS codes are 1 digits and are administered by the U.S. International Trade Commission.

    8541.21.00.95
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Reach Compliance Code
    compliant
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    P-CHANNEL
  • JEDEC-95 Code
    TO-236AB
  • Drain-source On Resistance-Max
    0.3 Ω
  • DS Breakdown Voltage-Min
    30 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    0.5 W
  • Power Dissipation Ambient-Max
    0.46 W
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