NE3508M04-T2-A

National Semiconductor NE3508M04-T2-A

Part No:

NE3508M04-T2-A

Datasheet:

-

Package:

-

AINNX NO:

65687538-NE3508M04-T2-A

Description:

Small Signal GaAs FETs L to S Band Lo Noise Amplifier N-Ch HJFET

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    4
  • Transistor Element Material
    SILICON
  • Package Description
    SMALL OUTLINE, R-PDSO-F4
  • Package Style
    SMALL OUTLINE
  • Package Body Material
    PLASTIC/EPOXY
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Rohs Code
    Yes
  • Manufacturer Part Number
    NE3508M04-T2-A
  • Package Shape
    RECTANGULAR
  • Manufacturer
    NEC Electronics Group
  • Number of Elements
    1
  • Part Life Cycle Code
    Transferred
  • Ihs Manufacturer
    NEC ELECTRONICS CORP
  • Risk Rank
    5.3
  • Drain Current-Max (ID)
    0.03 A
  • JESD-609 Code
    e6
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN BISMUTH
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    LOW NOISE
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    FLAT
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    compliant
  • Pin Count

    a count of all of the component leads (or pins)

    4
  • JESD-30 Code
    R-PDSO-F4
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    DEPLETION MODE
  • Case Connection
    DRAIN
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    N-CHANNEL
  • DS Breakdown Voltage-Min
    3 V
  • FET Technology
    HETERO-JUNCTION
  • Highest Frequency Band
    S BAND
  • Power Gain-Min (Gp)
    12 dB
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