NT5TU128M8GE-AD

Nanya Technology Corporation NT5TU128M8GE-AD

Part No:

NT5TU128M8GE-AD

Datasheet:

Package:

-

AINNX NO:

69223864-NT5TU128M8GE-AD

Category:

Memory

Description:

DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    60
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    NANYA TECHNOLOGY CORP
  • Package Description
    FBGA, BGA60,9X11,32
  • Access Time-Max
    0.4 ns
  • Clock Frequency-Max (fCLK)
    400 MHz
  • Number of Words
    134217728 words
  • Number of Words Code
    128000000
  • Package Body Material
    PLASTIC/EPOXY
  • Package Code
    FBGA
  • Package Equivalence Code
    BGA60,9X11,32
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, FINE PITCH
  • Supply Voltage-Nom (Vsup)
    1.8 V
  • ECCN Code
    EAR99
  • HTS Code

    HTS (Harmonized Tariff Schedule) codes are product classification codes between 8-1 digits. The first six digits are an HS code, and the countries of import assign the subsequent digits to provide additional classification. U.S. HTS codes are 1 digits and are administered by the U.S. International Trade Commission.

    8542.32.00.32
  • Terminal Position
    BOTTOM
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    BALL
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Terminal Pitch

    The center distance from one pole to the next.

    0.8 mm
  • Reach Compliance Code
    compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PBGA-B60
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Supply Current-Max
    0.25 mA
  • Organization
    128MX8
  • Output Characteristics
    3-STATE
  • Memory Width
    8
  • Memory Density
    1073741824 bit
  • I/O Type
    COMMON
  • Memory IC Type
    DDR2 DRAM
  • Refresh Cycles
    8192
  • Sequential Burst Length
    4,8
  • Interleaved Burst Length
    4,8
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