All Products

ManufacturersRFQ BlogContact UsAbout Us
Home /RFIF and RFID /RF Amplifiers /RA08H1317M /
RA08H1317M

Mitsubishi Electric RA08H1317M

Part No:

RA08H1317M

Manufacturer:

Mitsubishi Electric

Package:

-

AINNX NO:

68724252-RA08H1317M

Category:

RF Amplifiers

Description:

Description: Narrow Band High Power Amplifier

Products specifications
  • Contact plating
    gold-plated
  • Number of pins
    43
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    MITSUBISHI ELECTRIC CORP
  • Operating Temperature-Max
    110 °C
  • Operating Temperature-Min
    -30 °C
  • Type of connector
    pin strips
  • Connector
    socket
  • Kind of connector
    female
  • Spatial orientation
    straight
  • Contacts pitch
    2.54mm
  • Electrical mounting
    THT
  • Connector pinout layout
    1x43
  • Gross weight
    1.63 g
  • Operating temperature
    -40...163°C
  • Construction
    MODULE
  • Reach Compliance Code
    unknown
  • Current rating
    1.5A
  • RF/Microwave Device Type
    NARROW BAND HIGH POWER
  • Operating Frequency-Min
    135 MHz
  • VSWR-Max
    4
  • Input Power-Max (CW)
    16 dBm
  • Characteristic Impedance
    50 Ω
  • Differential Nonlinearity
    175 MHz
  • Rated voltage
    60V
  • Profile
    beryllium copper
  • Plating thickness
    0.254µm
  • Flammability rating
    UL94V-0
0 Similar Products Remaining
Documents & Media Download datasheets and manufacturer documentation for Mitsubishi Electric RA08H1317M.
Related Categories
Popular Search
Hot Sale