QM50E2Y-H

Mitsubishi Electric QM50E2Y-H

Part No:

QM50E2Y-H

Manufacturer:

Mitsubishi Electric

Package:

-

AINNX NO:

69098006-QM50E2Y-H

Description:

Description: Power Bipolar Transistor, 50A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 5 Pin

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    NO
  • Number of Terminals
    5
  • Transistor Element Material
    SILICON
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    MITSUBISHI ELECTRIC CORP
  • Package Description
    FLANGE MOUNT, R-PUFM-X5
  • Number of Elements
    1
  • Operating Temperature-Max
    150 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    FLANGE MOUNT
  • ECCN Code
    EAR99
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    BUILT IN BIAS RESISTOR
  • Terminal Position
    UPPER
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    UNSPECIFIED
  • Reach Compliance Code
    unknown
  • JESD-30 Code
    R-PUFM-X5
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
  • Polarity/Channel Type
    NPN
  • Power Dissipation-Max (Abs)
    310 W
  • Collector Current-Max (IC)
    50 A
  • DC Current Gain-Min (hFE)
    75
  • VCEsat-Max
    2 V
  • Fall Time-Max (tf)
    3000 ns
0 Similar Products Remaining
Documents & Media Download datasheets and manufacturer documentation for Mitsubishi Electric QM50E2Y-H.