MGF0915A

MITSUBISHI MGF0915A

Part No:

MGF0915A

Manufacturer:

MITSUBISHI

Datasheet:

-

Package:

-

AINNX NO:

27804083-MGF0915A

Category:

Unclassified

Description:

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    3
  • Transistor Element Material
    GALLIUM ARSENIDE
  • Package Description
    CHIP CARRIER, R-CQCC-N3
  • Package Style
    CHIP CARRIER
  • Package Body Material
    CERAMIC, METAL-SEALED COFIRED
  • Operating Temperature-Max
    175 °C
  • Manufacturer Part Number
    MGF0915A
  • Package Shape
    RECTANGULAR
  • Manufacturer
    Mitsubishi Electric
  • Number of Elements
    1
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    MITSUBISHI ELECTRIC CORP
  • Risk Rank
    5.78
  • Drain Current-Max (ID)
    0.8 A
  • ECCN Code
    EAR99
  • HTS Code

    HTS (Harmonized Tariff Schedule) codes are product classification codes between 8-1 digits. The first six digits are an HS code, and the countries of import assign the subsequent digits to provide additional classification. U.S. HTS codes are 1 digits and are administered by the U.S. International Trade Commission.

    8541.29.00.75
  • Subcategory
    Other Transistors
  • Terminal Position
    QUAD
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    NO LEAD
  • Reach Compliance Code
    unknown
  • Pin Count

    a count of all of the component leads (or pins)

    3
  • JESD-30 Code
    R-CQCC-N3
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    DEPLETION MODE
  • Case Connection
    SOURCE
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    N-CHANNEL
  • Drain Current-Max (Abs) (ID)
    3 A
  • DS Breakdown Voltage-Min
    10 V
  • FET Technology
    JUNCTION
  • Highest Frequency Band
    S BAND
  • Power Dissipation Ambient-Max
    12 W
0 Similar Products Remaining