ARF463BP1G

Microsemi Corporation ARF463BP1G

Part No:

ARF463BP1G

Package:

TO-247-3

ROHS:

AINNX NO:

6090615-ARF463BP1G

Description:

Trans RF MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-247

Products specifications
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 3 weeks ago)
  • Factory Lead Time
    25 Weeks
  • Mount
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Elements
    1
  • Voltage Rated

    RATED voltage is the voltage on the nameplate - the "design point" for maximum power throughput and safe thermal operation.

    500V
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Bulk
  • Published
    1998
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    TIN SILVER COPPER
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150°C
  • Min Operating Temperature
    -55°C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    180W
  • Terminal Position
    SINGLE
  • Current Rating

    Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.

    9A
  • Frequency
    81.36MHz
  • Pin Count

    a count of all of the component leads (or pins)

    3
  • JESD-30 Code
    R-PSFM-T3
  • Configuration
    SINGLE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    180W
  • Case Connection
    SOURCE
  • Transistor Application
    AMPLIFIER
  • Transistor Type
    N-Channel
  • Continuous Drain Current (ID)
    9A
  • JEDEC-95 Code
    TO-247AD
  • Max Output Power

    The maximum output power = the maximum output current × the rated output voltage

    100W
  • Drain Current-Max (Abs) (ID)
    9A
  • DS Breakdown Voltage-Min
    500V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Voltage - Test
    125V
  • Power Gain
    15dB
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    RoHS Compliant
  • Lead Free
    Lead Free
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