APTGF90A60T1G

Microsemi Corporation APTGF90A60T1G

Part No:

APTGF90A60T1G

Datasheet:

APTGF90A60T1G

Package:

SP1

ROHS:

AINNX NO:

6050321-APTGF90A60T1G

Description:

POWER MOD IGBT NPT PHASE LEG SP1

Products specifications
  • Mount
    Chassis Mount, Screw
  • Mounting Type
    Chassis Mount
  • Package / Case
    SP1
  • Number of Pins
    12
  • Collector-Emitter Breakdown Voltage
    600V
  • Number of Elements
    2
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    12
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN SILVER COPPER
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150°C
  • Min Operating Temperature
    -40°C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    416W
  • Terminal Position
    UPPER
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    THROUGH-HOLE
  • Pin Count

    a count of all of the component leads (or pins)

    12
  • Configuration
    Half Bridge
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Dual
  • Case Connection
    ISOLATED
  • Transistor Application
    MOTOR CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Input
    Standard
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    110A
  • Current - Collector Cutoff (Max)
    250μA
  • Input Capacitance

    The capacitance between the input terminals of an op amp with either input grounded. It is expressed in units of farads.

    4.3nF
  • Turn On Time

    The time that it takes a gate circuit to allow a current to reach its full value.

    51 ns
  • Vce(on) (Max) @ Vge, Ic
    2.5V @ 15V, 90A
  • Turn Off Time-Nom (toff)
    210 ns
  • IGBT Type
    NPT
  • NTC Thermistor

    resistors with a negative temperature coefficient, which means that the resistance decreases with increasing temperature.

    Yes
  • Gate-Emitter Voltage-Max
    20V
  • Input Capacitance (Cies) @ Vce
    4.3nF @ 25V
  • VCEsat-Max
    2.5 V
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    RoHS Compliant
  • Lead Free
    Lead Free
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