Microsemi Corporation APT50GT60BRDQ2G

Factory Lead Time

25 Weeks

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Weight

38.000013g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 50A, 5 Ω, 15V

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C~150°C TJ

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tube

Series

Thunderbolt IGBT®

Published

1999

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Voltage - Rated DC

600V

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

446W

Current Rating

Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.

110A

Pin Count

a count of all of the component leads (or pins)

3

JESD-30 Code

R-PSFM-T3

Element Configuration

The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

Single

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

110A

Reverse Recovery Time

22 ns

Turn On Time

The time that it takes a gate circuit to allow a current to reach its full value.

46 ns

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 50A

Continuous Collector Current

110A

Turn Off Time-Nom (toff)

365 ns

IGBT Type

NPT

Gate Charge

the amount of charge that needs to be injected into the gate electrode to turn ON (drive) the MOSFET.

240nC

Current - Collector Pulsed (Icm)

150A

Td (on/off) @ 25°C

14ns/240ns

Switching Energy

995μJ (on), 1070μJ (off)

Gate-Emitter Voltage-Max

30V

Gate-Emitter Thr Voltage-Max

5V

Height

5.31mm

Length

21.46mm

Width

16.26mm

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No

RoHS Status

RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

RoHS Compliant

Lead Free

Lead Free