1011GN-1000V

Microsemi 1011GN-1000V

Part No:

1011GN-1000V

Manufacturer:

Microsemi

Datasheet:

-

Package:

-

AINNX NO:

38467088-1011GN-1000V

Description:

RF POWER TRANSISTOR

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    2
  • Transistor Element Material
    GALLIUM NITRIDE
  • Package Style
    FLANGE MOUNT
  • Package Body Material
    CERAMIC, METAL-SEALED COFIRED
  • Operating Temperature-Max
    250 °C
  • Manufacturer Part Number
    1011GN-1000V
  • Package Shape
    RECTANGULAR
  • Manufacturer
    Microsemi Corporation
  • Number of Elements
    1
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    MICROSEMI CORP
  • Risk Rank
    5.55
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    FLAT
  • Reach Compliance Code
    compliant
  • JESD-30 Code
    R-CDFM-F2
  • Configuration
    SINGLE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    SOURCE
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    N-CHANNEL
  • DS Breakdown Voltage-Min
    150 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Highest Frequency Band
    L BAND
  • Power Dissipation Ambient-Max
    1830 W
  • Power Gain-Min (Gp)
    19 dB
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