MT4HTF3264HZ-667G1

Micron Technology Inc. MT4HTF3264HZ-667G1

Part No:

MT4HTF3264HZ-667G1

Datasheet:

MT4HTFyyyHZ

Package:

200-SODIMM

ROHS:

AINNX NO:

2778651-MT4HTF3264HZ-667G1

Description:

DRAM Module DDR2 SDRAM 256Mbyte 200SODIMM

Products specifications
  • Mount
    Socket
  • Package / Case
    200-SODIMM
  • Number of Pins
    200
  • Memory Types
    DDR2 SDRAM
  • Number of Elements
    4
  • Published
    2010
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Obsolete
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    200
  • Terminal Finish
    MATTE TIN
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    70°C
  • Min Operating Temperature
    0°C
  • Terminal Position
    DUAL
  • Peak Reflow Temperature (Cel)
    260
  • Supply Voltage
    1.8V
  • Terminal Pitch

    The center distance from one pole to the next.

    0.6mm
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Operating Supply Voltage

    The voltage level by which an electrical system is designated and to which certain operating characteristics of the system are related.

    1.8V
  • Temperature Grade

    Temperature grades represent a tire's resistance to heat and its ability to dissipate heat when tested under controlled laboratory test conditions.

    COMMERCIAL
  • Max Supply Voltage

    In general, the absolute maximum common-mode voltage is VEE-0.3V and VCC+0.3V, but for products without a protection element at the VCC side, voltages up to the absolute maximum rated supply voltage (i.e. VEE+36V) can be supplied, regardless of supply voltage.

    1.9V
  • Min Supply Voltage

    The minimum supply voltage (V min ) is explored for sequential logic circuits by statistically simulating the impact of within-die process variations and gate-dielectric soft breakdown on data retention and hold time.

    1.7V
  • Memory Size

    The memory capacity is the amount of data a device can store at any given time in its memory.

    256MB
  • Speed
    667MT/s
  • Clock Frequency
    333MHz
  • Data Bus Width
    64b
  • Output Characteristics
    3-STATE
  • Memory Width
    64
  • Standby Current-Max
    0.028A
  • Max Frequency
    667MHz
  • I/O Type
    COMMON
  • Refresh Cycles
    8192
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
0 Similar Products Remaining
Documents & Media Download datasheets and manufacturer documentation for Micron Technology Inc. MT4HTF3264HZ-667G1.