MIW40N120FLA-BP

Micro Commercial Co MIW40N120FLA-BP

Part No:

MIW40N120FLA-BP

Manufacturer:

Micro Commercial Co

Datasheet:

-

Package:

TO-247-3

AINNX NO:

28808920-MIW40N120FLA-BP

Description:

IGBT 1200V 40A,TO-247AB

Products specifications
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247AB
  • Mfr
    Micro Commercial Co
  • Package
    Tube
  • Product Status
    Active
  • Current-Collector (Ic) (Max)
    80 A
  • Test Conditions
    600V, 40A, 12Ohm, 15V
  • Base Product Number
    MIW40
  • Maximum Gate Emitter Voltage
    - 20 V, + 20 V
  • Pd - Power Dissipation
    428 W
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 175 C
  • Minimum Operating Temperature
    - 40 C
  • Factory Pack QuantityFactory Pack Quantity
    1800
  • Mounting Styles
    Through Hole
  • Manufacturer
    Micro Commercial Components (MCC)
  • Brand
    Micro Commercial Components (MCC)
  • RoHS
    Details
  • Collector- Emitter Voltage VCEO Max
    1.2 kV
  • Series
    -
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -40°C ~ 175°C (TJ)
  • Subcategory
    IGBTs
  • Technology
    Si
  • Configuration
    Single
  • Input Type
    Standard
  • Power - Max
    428 W
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    IGBT Transistors
  • Voltage - Collector Emitter Breakdown (Max)
    1200 V
  • Vce(on) (Max) @ Vge, Ic
    2.3V @ 15V, 40A
  • Continuous Collector Current
    40 A
  • IGBT Type
    Trench Field Stop
  • Gate Charge

    the amount of charge that needs to be injected into the gate electrode to turn ON (drive) the MOSFET.

    330 nC
  • Current - Collector Pulsed (Icm)
    160 A
  • Td (on/off) @ 25°C
    45ns/180ns
  • Switching Energy
    3.8mJ (on), 1.7mJ (off)
  • Product Category

    a particular group of related products.

    IGBT Transistors
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