JANSR2N2222AUB/TR

Microchip Technology JANSR2N2222AUB/TR

Part No:

JANSR2N2222AUB/TR

Datasheet:

-

Package:

3-SMD, No Lead

AINNX NO:

28464950-JANSR2N2222AUB/TR

Description:

TRANS NPN 50V 0.8A UB

Products specifications
  • Mounting Type
    Surface Mount
  • Package / Case
    3-SMD, No Lead
  • Supplier Device Package
    UB
  • Mfr
    Microchip Technology
  • Package
    Tape & Reel (TR)
  • Product Status
    Active
  • Current-Collector (Ic) (Max)
    800 mA
  • Transistor Polarity
    NPN
  • Emitter- Base Voltage VEBO
    6 V
  • Pd - Power Dissipation
    500 mW
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 200 C
  • DC Collector/Base Gain hfe Min
    30 at 500mA, 10 V
  • Minimum Operating Temperature
    - 65 C
  • Factory Pack QuantityFactory Pack Quantity
    1
  • Mounting Styles
    SMD/SMT
  • Manufacturer
    Microchip
  • Brand
    Microchip / Microsemi
  • Maximum DC Collector Current
    800 mA
  • DC Current Gain hFE Max
    325 at 1 mA, 10 V
  • RoHS
    N
  • Collector- Emitter Voltage VCEO Max
    50 V
  • Series
    Military, MIL-PRF-19500/255
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -65°C ~ 200°C (TJ)
  • Subcategory
    Transistors
  • Technology
    Si
  • Configuration
    Single
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    500
  • Power - Max
    500 mW
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    BJTs - Bipolar Transistors
  • Transistor Type
    NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 150mA, 10V
  • Current - Collector Cutoff (Max)
    50nA
  • Vce Saturation (Max) @ Ib, Ic
    1V @ 50mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max)
    50 V
  • Frequency - Transition
    -
  • Collector Base Voltage (VCBO)
    75 V
  • Continuous Collector Current
    800
  • Product Category

    a particular group of related products.

    Bipolar Transistors - BJT
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