Microchip Technology APT34N80B2C3G

Package / Case

T-MAX-3

Mounting Type

Through Hole

Surface Mount

having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

NO

Supplier Device Package

T-MAX™ [B2]

Number of Terminals

3

Transistor Element Material

SILICON

RoHS

Details

Mounting Styles

Through Hole

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

800 V

Id - Continuous Drain Current

34 A

Rds On - Drain-Source Resistance

145 mOhms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

2.1 V

Qg - Gate Charge

180 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 150 C

Pd - Power Dissipation

417 W

Channel Mode

Enhancement

Factory Pack QuantityFactory Pack Quantity

1

Typical Turn-Off Delay Time

70 ns

Typical Turn-On Delay Time

25 ns

Unit Weight

0.208116 oz

Continuous Drain Current Id

34

Package

Tube

Base Product Number

APT34N80

Current - Continuous Drain (Id) @ 25℃

34A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Mfr

Microchip Technology

Power Dissipation (Max)

417W (Tc)

Product Status

Active

Package Description

IN-LINE, R-PSIP-T3

Package Style

IN-LINE

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

NOT SPECIFIED

Operating Temperature-Max

150 °C

Rohs Code

Yes

Manufacturer Part Number

APT34N80B2C3G

Package Shape

RECTANGULAR

Number of Elements

1

Part Life Cycle Code

Active

Ihs Manufacturer

MICROSEMI CORP

Risk Rank

1.42

Drain Current-Max (ID)

34 A

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tube

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C ~ 150°C (TJ)

Series

-

JESD-609 Code

e1

Pbfree Code

Yes

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Additional Feature

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

AVALANCHE RATED

Terminal Position

SINGLE

Terminal Form

Occurring at or forming the end of a series, succession, or the like; closing; concluding.

THROUGH-HOLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

compliant

Pin Count

a count of all of the component leads (or pins)

3

JESD-30 Code

R-PSIP-T3

Qualification Status

An indicator of formal certification of qualifications.

Not Qualified

Configuration

Single

Number of Channels

1 Channel

Operating Mode

A phase of operation during the operation and maintenance stages of the life cycle of a facility.

ENHANCEMENT MODE

Power Dissipation

the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

417

Case Connection

DRAIN

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

145mOhm @ 22A, 10V

Vgs(th) (Max) @ Id

3.9V @ 2mA

Input Capacitance (Ciss) (Max) @ Vds

4510 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs

355 nC @ 10 V

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

15 ns

Drain to Source Voltage (Vdss)

800 V

Vgs (Max)

±20V

Polarity/Channel Type

N-CHANNEL

Drain-source On Resistance-Max

0.145 Ω

Pulsed Drain Current-Max (IDM)

102 A

DS Breakdown Voltage-Min

800 V

Channel Type

N

Avalanche Energy Rating (Eas)

670 mJ

FET Technology

METAL-OXIDE SEMICONDUCTOR

FET Feature

-