2N3439UA/TR

Microchip Technology 2N3439UA/TR

Part No:

2N3439UA/TR

Datasheet:

-

Package:

4-SMD, No Lead

AINNX NO:

28429248-2N3439UA/TR

Description:

TRANS NPN 350V 1A

Products specifications
  • Mounting Type
    Surface Mount
  • Package / Case
    4-SMD, No Lead
  • Supplier Device Package
    -
  • Mfr
    Microchip Technology
  • Package
    Tape & Reel (TR)
  • Product Status
    Active
  • Current-Collector (Ic) (Max)
    1 A
  • Emitter- Base Voltage VEBO
    7 V
  • Pd - Power Dissipation
    800 mW
  • Transistor Polarity
    NPN
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 200 C
  • DC Collector/Base Gain hfe Min
    10 at 200mA, 10 V
  • Minimum Operating Temperature
    - 65 C
  • Factory Pack QuantityFactory Pack Quantity
    1
  • Mounting Styles
    SMD/SMT
  • Manufacturer
    Microchip
  • Brand
    Microchip Technology
  • Maximum DC Collector Current
    1 A
  • DC Current Gain hFE Max
    160 at 20 mA, 10 V
  • RoHS
    N
  • Collector- Emitter Voltage VCEO Max
    350 V
  • Series
    -
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -65°C ~ 200°C (TJ)
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Reel
  • Subcategory
    Transistors
  • Technology
    Si
  • Configuration
    Single
  • Power - Max
    800 mW
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    BJTs - Bipolar Transistors
  • Transistor Type
    NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 20mA, 10V
  • Current - Collector Cutoff (Max)
    2μA
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 4mA, 50mA
  • Voltage - Collector Emitter Breakdown (Max)
    350 V
  • Frequency - Transition
    -
  • Collector Base Voltage (VCBO)
    450 V
  • Product Category

    a particular group of related products.

    Bipolar Transistors - BJT
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