Microchip MS2202

Mount

Chassis Mount, Surface Mount

Surface Mount

having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

YES

Number of Pins

4

Number of Terminals

4

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

3.5 V

RoHS

Compliant

Package Description

HERMETIC SEALED, M115, 4 PIN

Package Style

DISK BUTTON

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Reflow Temperature-Max (s)

NOT SPECIFIED

Operating Temperature-Max

200 °C

Rohs Code

No

Manufacturer Part Number

MS2202

Package Shape

ROUND

Manufacturer

Microsemi Corporation

Number of Elements

1

Part Life Cycle Code

Obsolete

Ihs Manufacturer

MICROSEMI CORP

Risk Rank

5.65

JESD-609 Code

e0

Pbfree Code

No

Terminal Finish

TIN LEAD

Max Operating Temperature

The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

200 °C

Min Operating Temperature

-65 °C

Additional Feature

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

HIGH RELIABILITY

Subcategory

Other Transistors

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

10 W

Terminal Position

RADIAL

Terminal Form

Occurring at or forming the end of a series, succession, or the like; closing; concluding.

FLAT

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

unknown

Pin Count

a count of all of the component leads (or pins)

4

JESD-30 Code

O-CRDB-F4

Qualification Status

An indicator of formal certification of qualifications.

Not Qualified

Polarity

NPN

Configuration

SINGLE

Case Connection

BASE

Output Power

That power available at a specified output of a device under specified conditions of operation.

2 W

Transistor Application

AMPLIFIER

Polarity/Channel Type

NPN

Max Collector Current

250 mA

Gain

9 dB

Max Frequency

1.15 GHz

Transition Frequency

1.15 GHz

Collector Base Voltage (VCBO)

45 V

Power Dissipation-Max (Abs)

10 W

Collector Current-Max (IC)

0.25 A

DC Current Gain-Min (hFE)

30

Highest Frequency Band

L BAND

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No

Lead Free

Lead Free