Microchip MRF581AG

Lifecycle Status

Obsolete (Last Updated: 2 months ago)

Mount

Surface Mount

Surface Mount

having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

YES

Number of Pins

4

Number of Terminals

4

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

15 V

RoHS

Compliant

Package Description

ROHS COMPLIANT, PLASTIC, M238, MACRO-X-4

Package Style

DISK BUTTON

Moisture Sensitivity Levels

1

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

NOT SPECIFIED

Operating Temperature-Max

150 °C

Rohs Code

Yes

Transition Frequency-Nom (fT)

5000 MHz

Manufacturer Part Number

MRF581AG

Package Shape

ROUND

Manufacturer

Microsemi Corporation

Number of Elements

1

Part Life Cycle Code

Obsolete

Ihs Manufacturer

MICROSEMI CORP

Risk Rank

5.36

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Bulk

JESD-609 Code

e1

Pbfree Code

Yes

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Max Operating Temperature

The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

150 °C

Min Operating Temperature

-65 °C

Additional Feature

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

LOW NOISE

Subcategory

Other Transistors

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

1.25 W

Terminal Position

RADIAL

Terminal Form

Occurring at or forming the end of a series, succession, or the like; closing; concluding.

FLAT

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

unknown

Pin Count

a count of all of the component leads (or pins)

4

JESD-30 Code

O-PRDB-F4

Qualification Status

An indicator of formal certification of qualifications.

Not Qualified

Configuration

SINGLE

Transistor Application

AMPLIFIER

Polarity/Channel Type

NPN

Collector Emitter Voltage (VCEO)

15 V

Max Collector Current

200 mA

Gain

15.5 dB

Transition Frequency

5 GHz

Collector Base Voltage (VCBO)

30 V

Power Dissipation-Max (Abs)

2.5 W

Collector Current-Max (IC)

0.2 A

DC Current Gain-Min (hFE)

90

Collector-Emitter Voltage-Max

15 V

Highest Frequency Band

ULTRA HIGH FREQUENCY BAND

Collector-Base Capacitance-Max

3 pF

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No